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(R)
74V1G125
SINGLE BUS BUFFER (3-STATE)
s s
s
s s
s
s
s
HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 A (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY
S (SOT23-5L) ORDER CODE: 74V1G125S
C (SC-70)
DESCRIPTION The 74V1G125 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It has similar high speed performance of equivalent Bipolar Schottky TTL combined with true CMOS low power dissipation.
3-STATE control input G has to be set high to place the output into the high impedance state. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
September 1999
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INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL 1G 1A 1Y GND VCC NAME AND FUNCT ION Output Enable Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
A X L H
X:"H" or "L" Z:High Impadance
G H L L
Y Z L H
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 20 25 50 -65 to +150 260 Unit V V V mA mA mA mA
o o
ICC or IGND DC VCC or Ground Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 1) (VCC = 3.3 0.3V) (V CC = 5.0 0.5V) Parameter Valu e 2.0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 100 0 to 20 Unit V V V
o
C
ns/V ns/V
1) VIN from 30% to70%of VCC
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DC SPECIFICATIONS
Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 IOZ II ICC 3 State Output Leakage Current Input Leakage Current Quiescent Supply Current 5.5 0 to 5.5 5.5 VI = V IH or VI L VI = V IH or VI L IO=-50 A IO=-50 A IO=-50 A IO=-4 mA IO=-8 mA IO=50 A IO=50 A IO=50 A IO=4 mA IO=8 mA VI = VIH or VIL VO = VCC or GND VI = 5.5V or GND VI = VCC or GND 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 0.25 0.1 1 2.0 3.0 4.5 Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 2.5 1.0 10 A A A V V Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC Max. V V Un it
AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns)
Symb ol Parameter V CC (V) tPLH tPHL Propagation Delay Time 3.3(*) 3.3(*) 5.0(**) 5.0(**) 3.3(*) 3.3(*) 5.0 5.0(**) tPZL tPZH Output Enable Time 3.3(*) 5.0(**)
(**)
Test Co ndition
Value T A = 25 o C Min. Typ . Max. 5.6 8.1 3.8 5.3 5.4 7.9 3.6 5.1 9.5 6.1 8.0 11.5 5.5 7.5 8.0 11.5 5.0 7.0 13.0 8.5
Un it -40 to 85 o C Min . Max. 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 9.5 13.0 6.5 8.5 9.5 13.0 6.0 8.0 15.0 10.0 ns ns
tPLZ tPHZ
Output Disable Time
C L = 15 pF C L = 50 pF C L = 15 pF C L = 50 pF C L = 15 pF (***) C L = 50 pF (***) C L = 15 pF (***) C L = 50 pF (***) C L = 50 pF (***) C L = 50 pF (***)
ns
(*) Voltage range is 3.3V 0.3V (**) Voltage range is 5V 0.5V (***) RL = 1K
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CAPACITIVE CHARACTERISTICS
Symb ol Parameter Test Co nditions Min. C IN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) T yp. 4 6 14 10 10 Valu e T A = 25 oC Max. -40 to 85 o C Min. Max. pF pF pF Un it
1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operting current can be obtained by the following equation. ICC(opr) = CPD * VCC * fIN + ICC
TEST CIRCUIT
T EST tPLH , tPHL tPZL , tPLZ tPZH , tPHZ
CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1K orequivalent RT = ZOUT of pulse generator (typically 50)
SW IT CH Open VCC GND
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WAVEFORM 1: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
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SOT23-5L MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 1.9 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 21.6
DIM.
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SC-70 MECHANICAL DATA
mm MIN. A A1 A2 b C D E E1 L e e1 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 1.3 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 0.0 31.5 5.9 3.9 70.9 70.9 45.3 3.9 25.6 51.2 mils TYP. MAX. 43.3 3.9 39.4 11.8 7.1 86.6 94.5 53.1 11.8
DIM.
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